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K2111 - 2SK2111

Datasheet Summary

Features

  • Low ON resistance RDS(on) = 0.6 Ω MAX. @VGS = 4.0 V, ID = 0.5 A.
  • High switching speed ton + toff < 100 ns.
  • Low parasitic capacitance.

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Datasheet preview – K2111

Datasheet Details

Part number K2111
Manufacturer NEC
File Size 54.98 KB
Description 2SK2111
Datasheet download datasheet K2111 Datasheet
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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2111 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2111 is a N-channel MOS FET of a vertical type and is a switching element that can be directly driven by the output of an IC operating at 5 V. This product has a low ON resistance and superb switching characteristics and is ideal for driving the actuators, such as motors and DC/DC converters. FEATURES • Low ON resistance RDS(on) = 0.6 Ω MAX. @VGS = 4.0 V, ID = 0.5 A • High switching speed ton + toff < 100 ns • Low parasitic capacitance PACKAGE DIMENSIONS (in mm) 4.5 ± 0.1 1.6 ± 0.2 1.5 ± 0.1 0.8 MIN. 2.5 ± 0.1 4.0 ± 0.25 SDG 0.42 ±0.06 1.5 0.42 0.47 ±0.06 ±0.06 3.0 0.41+–00..
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