K2139
DESCRIPTION
The 2SK2139 is N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters)
10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2
FEATURES
- Low On-Resistance
15.0±0.3
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
- Low Ciss Ciss = 930 p F TYP.
- High Avalanche Capability Ratings
- Isolate TO-220 (MP-45F) Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)- Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current-
- Single Avalanche Energy-
- - PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 600 ± 30 ± 5.0 ± 20 35 2.0 150 5.0 8.3 V V A A W W ˚C
3±0.1 4±0.2
0.7±0.1 2.54
1.3±0.2 1.5±0.2 2.54
13.5MIN.
12.0±0.2
2.5±0.1 0.65±0.1 1. Gate 2. Drain 3. Source
- 55 to +150 ˚C A m J
1 2 3
MP-45F (ISOLATED TO-220)
Drain
- - Starting Tch...
