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K2139 - MOS Field Effect Transistor

General Description

The 2SK2139 is N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

  • Low On-Resistance 15.0±0.3 RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A).
  • Low Ciss Ciss = 930 pF TYP.
  • High Avalanche Capability Ratings.
  • Isolate TO-220 (MP-45F) Package.

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Full PDF Text Transcription for K2139 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K2139. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2139 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2139 is N-Channel Power MOS Field Effect Transistor des...

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RIPTION The 2SK2139 is N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 FEATURES • Low On-Resistance 15.0±0.3 RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 930 pF TYP.

More Datasheets from NEC (now Renesas Electronics)

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