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K2139 - MOS Field Effect Transistor

Datasheet Summary

Description

The 2SK2139 is N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications.

Features

  • Low On-Resistance 15.0±0.3 RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A).
  • Low Ciss Ciss = 930 pF TYP.
  • High Avalanche Capability Ratings.
  • Isolate TO-220 (MP-45F) Package.

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Datasheet preview – K2139

Datasheet Details

Part number K2139
Manufacturer NEC
File Size 111.93 KB
Description MOS Field Effect Transistor
Datasheet download datasheet K2139 Datasheet
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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2139 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2139 is N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 FEATURES • Low On-Resistance 15.0±0.3 RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A) • Low Ciss Ciss = 930 pF TYP.
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