K2140
DESCRIPTION
The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect
Transistor designed for high voltage switching applications.
FEATURES
- Low On-state Resistance
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 3.5 A)
- Low Ciss Ciss = 930 p F TYP.
- High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 600 V
Gate to Source Voltage
VGSS
±30
Drain Current (DC)
ID(DC)
±7.0
Drain Current (pulse)-
ID(pulse) ±28
Total Power Dissipation (Tc = 25 ˚C)
PT1
75 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Storage Temperature
Tstg
- 55 to +150 ˚C
Channel Temperature
Tch 150 ˚C
Single Avalanche Current-
- IAS 7.0 A
Single Avalanche Energy-
- EAS 16.3 m J
- PW ≤ 10 µs, Duty Cycle ≤ 1 %
- - Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS (in...
