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K2275 - 2SK2275

General Description

tor designed for high voltage switching applications.

Key Features

  • Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A).
  • LOW Ciss Ciss = 1 000 pF TYP.
  • High Avalanche Capability Ratings.

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Other Datasheets by NEC (now Renesas Electronics)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2275 is N-channel Power MOS Field Effect Transis- tor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES • Low On-state Resistance RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 2.0 A) • LOW Ciss Ciss = 1 000 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID (DC) ±3.5 A Drain Current (pulse) ID (pulse)* ±14 A Total Power Dissipation (TC = 25 °C) PT1 35 W Total Power Dissipation (Ta = 25 °C) PT2 2.