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K2371 - 2SK2371

Download the K2371 datasheet PDF. This datasheet also covers the K2372 variant, as both devices belong to the same 2sk2371 family and are provided as variant models within a single manufacturer datasheet.

General Description

The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor www.DataSheet4U.com designed for high voltage switching applications.

Key Features

  • Low On-Resistance 2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A) 2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A).
  • Low Ciss Ciss = 3600 pF TYP.
  • High Avalanche Capability Ratings 20.0 ± 0.2 6.0 1.0 15.7 MAX. 3.2 ± 0.2 4 1 23 4.5 ± 0.2 7.0 4.7 MAX. 1.5 19 MIN. 3.0 ± 0.2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K2372_NEC.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
K2375 2SK2375 Panasonic Semiconductor
K2377 Silicon N-Channel Power F-MOS Panasonic
K2312 2SK2312 Toshiba Semiconductor
K2312 N-Channel 60V MOSFET VBsemi
K2313 2SK2313 Toshiba Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
K2370 2SK2370
K2372 2SK2372
K2341 2SK2341
K2354 2SK2354
K2362 2SK2362

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor www.DataSheet4U.com designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) FEATURES • Low On-Resistance 2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A) 2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A) • Low Ciss Ciss = 3600 pF TYP. • High Avalanche Capability Ratings 20.0 ± 0.2 6.0 1.0 15.7 MAX. 3.2 ± 0.2 4 1 23 4.5 ± 0.2 7.0 4.7 MAX. 1.5 19 MIN. 3.0 ± 0.