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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2499, 2SK2499-Z
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2499 is N-Channel MOS Field Effect Transistor designed
for high current switching applications.
FEATURES • Low On-Resistance
RDS(on)1 = 9 mW (VGS = 10 V, ID = 25 A) RDS(on)2 = 14 mW (VGS = 4 V, ID = 25 A)
• Low Ciss Ciss = 3 400 pF TYP. • High Avalanche Capability. • Built-in G-S Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±50
A
Drain Current (pulse)*
ID(pulse) ±200
A
Total Power Dissipation (Tc = 25 °C)
PT1
75
W
Total Power Dissipation (TA = 25 °C)
PT2
1.
K2499 Datasheet
