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K2723 - 2SK2723

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications.

Low On-Resistance RDS (on) 1 = 40mΩ Max.

(VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max.

(VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ.

Key Features

  • 2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source 1 2 3 MP-45F (.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3 3.2 ± 0.2 4.5 ± 0.2 2.7 ± 0.2 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. www.DataSheet4U.com 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 • Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A) Ciss = 830 pF Typ. • Low Ciss • Built-in G-S Protection Diode • Isolated TO-220 Package 0.7 ± 0.1 2.54 1.3 ± 0.2 1.5 ± 0.2 2.54 13.5MIN. 12.0 ± 0.2 FEATURES 2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.