K2723 Overview
This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max.
| Part number | K2723 |
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| Datasheet | K2723_NEC.pdf |
| File Size | 113.62 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | 2SK2723 |
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This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications. 15.0 ± 0.3 3 ± 0.1 4 ± 0.2 Low On-Resistance RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max.
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
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