K2826 Overview
Description
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A) RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A)
- Low Ciss : Ciss = 7200 pF (TYP.)
- Built-in Gate Protection Diode
