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K2984 - 2SK2984

General Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching application.

Key Features

  • Low on-resistance RDS(on)1 = 10 mΩ (MAX. ) (VGS = 10 V, ID = 20 A) RDS(on)2 = 15 mΩ (MAX. ) (VGS = 4.5 V, ID = 20 A).
  • Low Ciss Ciss = 2850 pF TYP.
  • Built-in gate protection diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2984 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching application. FEATURES • Low on-resistance RDS(on)1 = 10 mΩ (MAX.) (VGS = 10 V, ID = 20 A) RDS(on)2 = 15 mΩ (MAX.) (VGS = 4.5 V, ID = 20 A) • Low Ciss Ciss = 2850 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER 2SK2984 2SK2984-S 2SK2984-ZJ PACKAGE TO-220AB TO-262 TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note3 Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 30 ±20 ±40 ±160 1.