Datasheet4U Logo Datasheet4U.com

K3055 - 2SK3055

Datasheet Summary

Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A).
  • Low Ciss : Ciss = 920 pF TYP.
  • Built-in Gate Protection Diode.
  • Isolated TO-220 package.

📥 Download Datasheet

Datasheet preview – K3055

Datasheet Details

Part number K3055
Manufacturer NEC
File Size 122.48 KB
Description 2SK3055
Datasheet download datasheet K3055 Datasheet
Additional preview pages of the K3055 datasheet.

📁 Similar Datasheet

  • K300 - Silicon Zener Diodes (Aeroflex)
  • K300 - LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE (Knox Inc)
  • K3003 - 2SK3003 (Sanken)
  • K3004 - 2SK3004 (ETC)
  • K300zy - Thyristors (Littelfuse)
  • K301 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)
  • K3010 - 4PIN PHOTOTRANSISTOR (Cosmo)
  • K30101X - 4PIN PHOTOTRANSISTOR (Cosmo)
  • K30102X - 4PIN PHOTOTRANSISTOR (Cosmo)
  • K30103X - 4PIN PHOTOTRANSISTOR (Cosmo)
Other Datasheets by NEC

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3055 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3055 PACKAGE Isolated TO-220 DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diode • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 +20, −10 ±30 www.DataSheet.co.
Published: |