K3386
Description
The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Low On-state Resistance 5 RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) 5 RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A)
- Low Ciss : Ciss = 2100 pF TYP
- Built-in Gate Protection Diode
- TO-251/TO-252 package 2SK3386-Z TO-252 (TO-251)
