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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3457
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The 2SK3457 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3457
Isolated TO-220
FEATURES • Low gate charge
QG = 24 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 5.0 A) • Gate voltage rating ±30 V • Low on-state resistance
RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 3.