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K3713 - 2SK3713

General Description

The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications.

Key Features

  • Super high VGS(off): VGS(off) = 3.8 to 5.8 V.
  • Low Crss: Crss = 6.5 pF TYP.
  • Low QG: QG = 25 nC TYP.
  • Low on-state resistance: RDS(on) = 0.83 Ω MAX. (VGS = 10 V, ID = 5 A).

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
K3715 2SK3715

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.datasheet4u.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3713 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3713 is N-channel MOS Field Effect Transistor designed for high voltage and high speed switching applications. ORDERING INFORMATION PART NUMBER 2SK3713-SK PACKAGE TO-262 FEATURES • Super high VGS(off): VGS(off) = 3.8 to 5.8 V • Low Crss: Crss = 6.5 pF TYP. • Low QG: QG = 25 nC TYP. • Low on-state resistance: RDS(on) = 0.83 Ω MAX. (VGS = 10 V, ID = 5 A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 600 ±30 ±10 ±35 100 1.