• Part: NDL5522P
  • Description: InGaAs AVALANCHE PHOTO DIODE
  • Category: Diode
  • Manufacturer: NEC
  • Size: 119.49 KB
NDL5522P Datasheet (PDF) Download
NEC
NDL5522P

Key Features

  • Internal Si pre-amplifier IC
  • High sensitivity P = -33 dBm TYP. @ 2.5 Gb/s, NRZ
  • Wide dynamic range Dr = 24 dB TYP. @ 2.5 Gb/s, NRZ
  • Output impedance 50 Ω
  • Transimpedance 300 Ω
  • Detecting area size φ 50 µm
  • GI-50/125 multimode fiber pigtail
  • Hermetically sealed 6-pin butterfly package
  • 8 2.54 #3
  • 51 #1