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NDL5530 Datasheet PHOTO DIODE

Manufacturer: NEC (now Renesas Electronics)

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General Description

NDL5530 is an InGaAs avalanche photo diode especially designed for a detector of long wavelength optical fiber communications systems.

It covers the wavelength range between 1 000 and 1 600 nm with high efficiency.

Overview

DATA SHEET PHOTO DIODE NDL5530 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ30 µm InGaAs AVALANCHE PHOTO DIODE.

Key Features

  • Small dark current.
  • High quantum efficiency.
  • Cut-off frequency.
  • Detecting area size ID = 5 nA η = 90 % @ λ = 1 300 nm, M = 1 η = 77 % @ λ = 1 550 nm, M = 1 fC = 2.5 G H z MI N . @ M = 10 φ3 0 µm.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
NDL5531P 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE
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NDL5551P 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE
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NDL5561P 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE
NDL5590P 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs PIN PHOTO DIODE MODULE
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