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NDL5530 - PHOTO DIODE

Datasheet Summary

Description

communications systems.

It covers the wavelength range between 1 000 and 1 600 nm with high efficiency.

Features

  • Small dark current.
  • High quantum efficiency.
  • Cut-off frequency.
  • Detecting area size ID = 5 nA η = 90 % @ λ = 1 300 nm, M = 1 η = 77 % @ λ = 1 550 nm, M = 1 fC = 2.5 G H z MI N . @ M = 10 φ3 0 µm.

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Datasheet Details

Part number NDL5530
Manufacturer NEC
File Size 109.63 KB
Description PHOTO DIODE
Datasheet download datasheet NDL5530 Datasheet
Additional preview pages of the NDL5530 datasheet.

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Full PDF Text Transcription

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DATA SHEET PHOTO DIODE NDL5530 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS φ30 µm InGaAs AVALANCHE PHOTO DIODE Product DESCRIPTION NDL5530 is an InGaAs avalanche photo diode especially designed for a detector of long wavelength optical fiber communications systems. It covers the wavelength range between 1 000 and 1 600 nm with high efficiency. FEATURES • Small dark current • High quantum efficiency • Cut-off frequency • Detecting area size ID = 5 nA η = 90 % @ λ = 1 300 nm, M = 1 η = 77 % @ λ = 1 550 nm, M = 1 fC = 2.5 G H z MI N . @ M = 10 φ3 0 µm PACKAGE DIMENSIONS in millimeters +0.35 –0.10 5.35 φ 4.6 ±0.1 φ 2.5 φ Disc 0.o3ntinued 0.5 ±0.2*1 3.9 ±0.15 12.5 MIN. Kovar Glass t = 0.3 mm, N = 1.53 PIN CONNECTIONS 4 31 1. Anode (Negative) 3. Cathode (Positive) 4.
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