NE24200 datasheet by NEC (now Renesas Electronics).
| Part number | NE24200 |
|---|---|
| Datasheet | NE24200_NEC.pdf |
| File Size | 85.88 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
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NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for mercial systems, industrial and space applications.
View all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| NE202 | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
| NE20248 | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
| NE20283A | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
| NE202XX | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
| NE202XX-1.4 | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
| NE219 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE21903 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE21908 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE21912 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE21935 | NPN SILICON HIGH FREQUENCY TRANSISTOR |
