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NE24200 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

General Description

NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP. , Ga = 11.0 dB TYP. at f = 12 GHz.
  • Gate Length : Lg = 0.25 µm.
  • Gate Width : Wg = 200 µm.

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Full PDF Text Transcription (Reference)

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz • Gate Length : Lg = 0.