NEC NE24200
NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.| Part No. | NE24200 |
|---|---|
| Datasheet | NE24200 Download |
| Manufacturer |  NEC |
| Description | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP |
| Buy | Stock & Price |
DESCRIPTION
NE32400 andFEATURES
● Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz● Gate Length : Lg = 0.25 µm
● Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32400 NE24200 Standard (Grade D) Grade C and B (B is special order) QUALITY GRADE
APPLICATIONS
Commercial Industrial, spaceABSOLUTE MAXIMUM RATINGS
(TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot* Tch Tstg 4.0 –3.0 IDSS 200 175 –65 to +175 V V mA mW ˚ C ˚ C * Chip mounted on a Alumina heatsink (size: 3 × 3 × 0.6t)ELECTRICAL CHARACTERISTICS
(TA = 25 ˚C) PARAMETER Gate to Source Leak Current Saturated Drain Current Gate to Source Cutoff Voltage Transconductance Thermal Resistance Noise Figure Associated Gain SYMBOL IGSO IDSS VGS(off) gm Rth* NF Ga MIN. – 15 –0.2 45 – – 10.0 TYP. 0.5 40 –0.8 60 – 0.6 11.0 MAX. 10 70 –2.0 – 260 0.7 – UNIT TEST CONDITIONS VGS = –3 V...
