NE27200 Datasheet | NEC

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped Al Ga As and undoped In Ga As to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for mercial systems, industrial and space applications. Features - Super Low Noise Figure & High Associated Gain NF = 0.45 d B TYP., Ga = 12.5 d B TYP. at f = 12 GHz - Gate Length : Lg = 0.2 µm - Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32500 NE27200 Standard (Grade D) Special, specific (Grade C and B) QUALITY...