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NE27200 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

Description

NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

Features

  • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP. , Ga = 12.5 dB TYP. at f = 12 GHz.
  • Gate Length : Lg = 0.2 µm.
  • Gate Width : Wg = 200 µm.

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Datasheet Details

Part number NE27200
Manufacturer NEC
File Size 39.82 KB
Description C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Datasheet download datasheet NE27200 Datasheet
Additional preview pages of the NE27200 datasheet.

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Full PDF Text Transcription

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DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP., Ga = 12.5 dB TYP. at f = 12 GHz • Gate Length : Lg = 0.
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