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NE27200 Datasheet C To Ka Band Super Low Noise Amplifier N-channel Hj-fet Chip

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32500, NE27200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET.

General Description

NE32500 and NE27200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP. , Ga = 12.5 dB TYP. at f = 12 GHz.
  • Gate Length : Lg = 0.2 µm.
  • Gate Width : Wg = 200 µm.

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