NE32400 Datasheet PDF

DESCRIPTION

NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems, industrial and space applications.

FEATURES

● Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
● Gate Length : Lg = 0.25 µm
● Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32400 NE24200 Standard (Grade D) Grade C and B (B is special order) QUALITY GRADE

APPLICATIONS

Commercial Industrial, space

ABSOLUTE MAXIMUM RATINGS

(TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot* Tch Tstg 4.0 –3.0 IDSS 200 175 –65 to +175 V V mA mW ˚ C ˚ C * Chip mounted on a Alumina heatsink (size: 3 × 3 × 0.6t)

ELECTRICAL CHARACTERISTICS

(TA = 25 ˚C) PARAMETER Gate to Source Leak Current Sat...