NE33284A-SL Overview
Description
The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems.
Key Features
- Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz
- Gate Width: Wg = 280 µm 1.78 ±0.2 L U 2 L 3 L 4
