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NE38018 - L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET

Features

  • Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz 4 pins super mini mold package Wg = 800 µm.

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Datasheet Details

Part number NE38018
Manufacturer NEC
File Size 94.24 KB
Description L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET
Datasheet download datasheet NE38018 Datasheet
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Full PDF Text Transcription

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PRELIMINARY DATA SHEET Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OIP3 = 22 dBm (V67), OIP3 = 23 dBm (V68) typ. at f = 2 GHz NF = 0.4 dB typ. Ga = 20 dB typ. at f = 900 MHz 4 pins super mini mold package Wg = 800 µm ORDERING INFORMATION (PLAN) Part Number NE38018-T1 Quantity 3 kpcs/Reel. Packing Style Embossed tape 8 mm wide. Pin3 (Source), Pin4 (Drain) face to perforation side of the tape. NE38018-T2 3 kpcs/Reel. Embossed tape 8 mm wide. Pin1 (Source), Pin2 (Gate) face to perforation side of the tape. Remark Please contact with responsible NEC person, if you require evaluation sample.
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