NE4210S01 Datasheet | NEC

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another mercial systems. Features - Super Low Noise Figure & High Associated Gain NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz - Gate Length: Lg ≤ 0.20 µm - Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE4210S01-T1 NE4210S01-T1B Marking L Supplying Form Tape & reel 1 kp/reel Tape & reel 4 kp/reel Remark To order evaluation samples, please contact your...