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NE5510279A - 4.8V OPERATION SILICON RF POWER LDMOS FET

General Description

for 4.8 V GSM 1 800 handsets.

Dies are manufactured using our NEWMOS technology (our 0.6 µm WSi gate laterally diffused MOS FET) and housed in a surface mount package.

Key Features

  • High output power : Pout = 35.5 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : Pout = 33.0 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm).
  • High power added efficiency : ηadd = 65% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : ηadd = 47% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm).
  • High linear gain : GL = 16.0 dB TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 10 dBm) : GL = 10.0.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 µm WSi gate laterally diffused MOS FET) and housed in a surface mount package. The device can deliver 33.0 dBm output power with 47% power added efficiency at 1.8 GHz under the 4.8 V supply voltage. FEATURES • High output power : Pout = 35.5 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : Pout = 33.0 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm) • High power added efficiency : ηadd = 65% TYP. (VDS = 4.