• Part: NE5510279A
  • Description: 4.8V OPERATION SILICON RF POWER LDMOS FET
  • Manufacturer: NEC
  • Size: 55.85 KB
NE5510279A Datasheet (PDF) Download
NEC
NE5510279A

Overview

  • High output power : Pout = 35.5 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : Pout = 33.0 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm)
  • High power added efficiency : ηadd = 65% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : ηadd = 47% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm)
  • High linear gain : GL = 16.0 dB TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 10 dBm) : GL = 10.0 dB TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 10 dBm)
  • Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
  • Single supply : VDS = 3.0 to 8.0 V