NE5510279A Description
The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 µm WSi gate laterally diffused MOS FET) and housed in a surface mount package. The device can deliver 33.0 dBm output power with 47% power added efficiency at 1.8 GHz under the 4.8 V supply voltage.
NE5510279A Key Features
- High output power
- High power added efficiency : ηadd = 65% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm)
- High linear gain
- Surface mount package
- Single supply