NE5510279A - 4.8V OPERATION SILICON RF POWER LDMOS FET

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NEC

Part number	NE5510279A
Manufacturer	NEC
File Size	55.85 KB
Description	4.8V OPERATION SILICON RF POWER LDMOS FET
Datasheet	NE5510279A Datasheet
Additional preview pages of the NE5510279A datasheet.

for 4.8 V GSM 1 800 handsets.

Dies are manufactured using our NEWMOS technology (our 0.6 µm WSi gate laterally diffused MOS FET) and housed in a surface mount package.

High output power : Pout = 35.5 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : Pout = 33.0 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm).
High power added efficiency : ηadd = 65% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm) : ηadd = 47% TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm).
High linear gain : GL = 16.0 dB TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 10 dBm) : GL = 10.0.

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Published: Jul 9, 2007 |