| Part number | NE6500496 |
|---|---|
| Datasheet | NE6500496_NEC.pdf |
| File Size | 37.58 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
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The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce , the device has a PHS (Plated Heat Sink) structure. mm) 1.0 ± 0.1 4.0 MIN BOTHLEADS SOURCE GATE φ 2.2 ±0.3 2 SLACES 4.0.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
NE6500496 | L&S BAND MEDIUM POWER GaAs MESFET | California Eastern |
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| NE6500379 | 3W L / S-BAND POWER GaAs MESFET |
| NE6500379A | 3W L / S-BAND POWER GaAs MESFET |
| NE6501077 | 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE650R279A | 0.2 W L / S-BAND POWER GaAs MES FET |
| NE650R479A | 0.4 W L / S-BAND POWER GaAs MES FET |
| NE6510179 | 1 W L-BAND POWER GaAs HJ-FET |
| NE6510179A | 1 W L-BAND POWER GaAs HJ-FET |
| NE6510379A | 3 W L-BAND POWER GaAs HJ-FET |
| NE651R479A | 0.4 W L-BAND POWER GaAs HJ-FET |
| NE661M04 | NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
