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NE6500496 - 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

General Description

The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.

To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure.

Key Features

  • Class A operation.
  • High output power: 36 dBm (typ).
  • High gain: 11.5 dB (typ).
  • High power added efficiency: 45 % (typ).
  • Hermetically sealed ceramic package.

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Full PDF Text Transcription (Reference)

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PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure. PACKAGE DIMENSION (UNIT: mm) 1.0 ± 0.1 4.0 MIN BOTHLEADS SOURCE GATE φ 2.2 ±0.3 2 SLACES 4.0 FEATURES • Class A operation • High output power: 36 dBm (typ) • High gain: 11.