| Part number | NE6510379A |
|---|---|
| Datasheet | NE6510379A_NEC.pdf |
| File Size | 97.47 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | 3 W L-BAND POWER GaAs HJ-FET |
|
|
The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile munication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| NE6510179 | 1 W L-BAND POWER GaAs HJ-FET |
| NE6510179A | 1 W L-BAND POWER GaAs HJ-FET |
| NE651R479A | 0.4 W L-BAND POWER GaAs HJ-FET |
| NE6500379 | 3W L / S-BAND POWER GaAs MESFET |
| NE6500379A | 3W L / S-BAND POWER GaAs MESFET |
| NE6500496 | 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE6501077 | 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE650R279A | 0.2 W L / S-BAND POWER GaAs MES FET |
| NE650R479A | 0.4 W L / S-BAND POWER GaAs MES FET |
| NE661M04 | NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD |
