NE6510379A
DESCRIPTION
The NE6510379A is a 3 W Ga As HJ-FET designed for middle power transmitter applications for mobile munication systems. It is capable of delivering 3 watt of output power (1/3 Duty pulse operation) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
- Ga As HJ-FET Structure
- High Output Power
- High Linear Gain : PO = +35 d Bm typ. @VDS = 3.5 V, IDset = 200 m A, f = 900 MHz, Pin = +24 d Bm, 1/3 duty PO = +32.5 d Bm typ. @VDS = 3.5 V, IDset = 200 m A, f = 1.9 GHz, Pin = +26 d Bm, 1/3 duty : GL = 13 d B typ. @VDS = 3.5 V, IDset = 200 m A, f = 900 MHz, Pin = 0 d Bm, 1/3 duty GL = 8 d B typ. @VDS = 3.5 V, IDset = 200 m A, f = 1.9 GHz, Pin = 0 d Bm, 1/3 duty
- High Power Added Efficiency: 58% typ. @VDS = 3.5 V, IDset = 200 m A, f = 900 MHz, Pin = +24 d Bm, 1/3 duty 52% typ. @VDS = 3.5 V, IDset = 200 m A, f = 1.9 GHz, Pin = +26 d Bm, 1/3 duty
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