NE6510379A - 3 W L-BAND POWER GaAs HJ-FET

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NEC

Part number	NE6510379A
Manufacturer	NEC
File Size	97.47 KB
Description	3 W L-BAND POWER GaAs HJ-FET
Datasheet	NE6510379A Datasheet
Additional preview pages of the NE6510379A datasheet.

The NE6510379A is a 3 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication systems.

GaAs HJ-FET Structure.
High Output Power.
High Linear Gain : PO = +35 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = +24 dBm, 1/3 duty PO = +32.5 dBm typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = +26 dBm, 1/3 duty : GL = 13 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 900 MHz, Pin = 0 dBm, 1/3 duty GL = 8 dB typ. @VDS = 3.5 V, IDset = 200 mA, f = 1.9 GHz, Pin = 0 dBm, 1/3 duty.
High Power Added Efficiency: 58% typ. @VDS = 3.5 V, IDset = 200 mA.

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Published: May 7, 2005 |