NE651R479A
DESCRIPTION
The NE651R479A is a 0.4 W Ga As HJ-FET designed for middle power transmitter applications for mobile munication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
- Ga As HJ-FET structure
- High output power : Pout = +27.0 d Bm TYP. @ VDS = 3.5 V, IDset = 50 m A, f = 900 MHz, Pin = +13 d Bm Pout = +27.0 d Bm TYP. @ VDS = 3.5 V, IDset = 50 m A, f = 1.9 GHz, Pin = +15 d Bm Pout = +29.5 d Bm TYP. @ VDS = 5.0 V, IDset = 50 m A, f = 1.9 GHz, Pin = +15 d Bm
- High linear gain : GL = 14.0 d B TYP. @ VDS = 3.5 V, IDset = 50 m A, f = 900 MHz, Pin = 0 d Bm GL = 12.0 d B TYP. @ VDS = 3.5 V, IDset = 50 m A, f = 1.9 GHz, Pin = 0 d Bm GL = 12.0 d B TYP. @ VDS = 5.0 V, IDset = 50 m A, f = 1.9 GHz, Pin = 0 d Bm
- High power added efficiency :...
