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NE651R479A - 0.4 W L-BAND POWER GaAs HJ-FET

General Description

The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems.

Key Features

  • GaAs HJ-FET structure.
  • High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm.
  • High linear gain : GL = 14.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = 0 dBm GL = 12.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm GL = 12.0 dB TYP. @ VDS =.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NE6510179 1 W L-BAND POWER GaAs HJ-FET
NE6510179A 1 W L-BAND POWER GaAs HJ-FET
NE6510379A 3 W L-BAND POWER GaAs HJ-FET
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NE6500379A 3W L / S-BAND POWER GaAs MESFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET N-CHANNEL GaAs HJ-FET NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems. It is capable of delivering 0.4 W of output power (CW) with high linear gain, high efficiency and excellent distortion and as a driver amplifier for our NE6510179A and NE6510379A. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • GaAs HJ-FET structure • High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.