NE651R479A - 0.4 W L-BAND POWER GaAs HJ-FET

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NEC

Part number	NE651R479A
Manufacturer	NEC
File Size	69.20 KB
Description	0.4 W L-BAND POWER GaAs HJ-FET
Datasheet	NE651R479A Datasheet
Additional preview pages of the NE651R479A datasheet.

The NE651R479A is a 0.4 W GaAs HJ-FET designed for middle power transmitter applications for mobile communication and wireless PC LAN systems.

GaAs HJ-FET structure.
High output power : Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = +13 dBm Pout = +27.0 dBm TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm Pout = +29.5 dBm TYP. @ VDS = 5.0 V, IDset = 50 mA, f = 1.9 GHz, Pin = +15 dBm.
High linear gain : GL = 14.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 900 MHz, Pin = 0 dBm GL = 12.0 dB TYP. @ VDS = 3.5 V, IDset = 50 mA, f = 1.9 GHz, Pin = 0 dBm GL = 12.0 dB TYP. @ VDS =.

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Published: May 7, 2005 |