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NE662M16-T3 - NPN SILICON HIGH FREQUENCY TRANSISTOR

General Description

The NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process.

With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz.

The NE662M16 provides excellent low voltage/low current performance.

Key Features

  • HIGH GAIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.50mm NE662M16 DESCRIPTION The NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M16" package is ideal for today's portable wireless applications. The NE662M16 is an ideal choice for LNA and oscillator requirements in all mobile communication systems.