NE662M16-T3 Datasheet | NEC

NPN SILICON HIGH FREQUENCY TRANSISTOR Features - - - - HIGH GAIN BANDWIDTH: f T = 25 GHz LOW NOISE FIGURE: NF = 1.1 d B at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 d B at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: - Flat Lead Style with a height of just 0.50mm NE662M16 DESCRIPTION The NE662M16 is fabricated using NEC's UHS0 25 GHz f T wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M16" package is ideal for today's portable wireless applications. The NE662M16 is an ideal choice for LNA and oscillator requirements in all mobile munication systems. M16 ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain2 at VCE = 2 V, IC = 5 m A Gain Bandwidth at VCE = 3 V, IC = 30 m A, f = 2 GHz Maximum Stable Gain4 at VCE = 2 V, IC = 20 m A, f = 2 GHz Insertion Power Gain at VCE = 2 V, IC = 20 m A, f = 2 GHz Noise Figure at VCE = 2 V, IC = 5 m A, f = 2 GHz, ZIN = ZOPT Output Power at 1 d B pression point at VCE = 2 V, IC = 20 m A, f = 2 GHz Third Order Intercept Point at VCE = 2 V, IC = 20 m A, f = 2 GHz Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz p F GHz d B d B d B d Bm 14 UNITS n A n A 50 20 70 25 20 17 1.1 11 22 0.14 0.24 1.5 MIN NE662M16 2SC5704 M16 TYP MAX 200 200 100 IEBO h FE f T MSG |S21E|2 NF P1d B IP3 Cre Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin. 4. MSG = S21 S12 NE662M16...