Datasheet4U Logo Datasheet4U.com

NE662M16-T3 - NPN SILICON HIGH FREQUENCY TRANSISTOR

Description

The NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process.

With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz.

The NE662M16 provides excellent low voltage/low current performance.

Features

  • HIGH GAIN.

📥 Download Datasheet

Datasheet preview – NE662M16-T3

Datasheet Details

Part number NE662M16-T3
Manufacturer NEC
File Size 63.42 KB
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE662M16-T3 Datasheet
Additional preview pages of the NE662M16-T3 datasheet.

📁 Similar Datasheet

  • NE662M16-T3-A - NPN SILICON RF TRANSISTOR (CEL)
  • NE662M16-A - NPN SILICON RF TRANSISTOR (CEL)
  • NE662M16 - NPN SILICON RF TRANSISTOR (CEL)
  • NE662M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR (CEL)
  • NE66219 - NPN SILICON RF TRANSISTOR (California Eastern Labs)
  • NE663M04 - NPN SILICON HIGH FREQUENCY TRANSISTOR (California Eastern Labs)
  • NE664M04 - NPN SILICON RF TRANSISTOR (California Eastern Labs)
  • NE664M04-A - NPN SILICON RF TRANSISTOR (CEL)
  • NE664M04-T2-A - NPN SILICON RF TRANSISTOR (CEL)
  • NE66719 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR (California Eastern Labs)
Other Datasheets by NEC
  • NE662M16 - NPN SILICON HIGH FREQUENCY TRANSISTOR
  • NE661M04 - NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
  • NE661M04-T2 - NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
  • NE6500379 - 3W L / S-BAND POWER GaAs MESFET
  • NE6500379A - 3W L / S-BAND POWER GaAs MESFET
  • NE6500496 - 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
  • NE6501077 - 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
  • NE650R279A - 0.2 W L / S-BAND POWER GaAs MES FET

Full PDF Text Transcription

Click to expand full text
NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.50mm NE662M16 DESCRIPTION The NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process. With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz. The NE662M16 provides excellent low voltage/low current performance. NEC's new low profile/flat lead style "M16" package is ideal for today's portable wireless applications. The NE662M16 is an ideal choice for LNA and oscillator requirements in all mobile communication systems.
Published: |