NE678M04
FEATURES
- -
- - HIGH GAIN BANDWIDTH: f T = 12 GHz HIGH OUTPUT POWER: P-1d B = 18 d Bm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 d B at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance
+0.40-0.05 2
+0.30
2.05±0.1 1.25±0.1
2.0±0.1
R55
1.25 0.650.65
DESCRIPTION
The NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1d B of 18 d Bm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. The NE678M04 is housed in NEC's new low profile/flat lead style "M04" package
+0.30-0.05 (leads 1, 3 and ,4)
0.59±0.05 +0.11-0.05
MAX 100 100 75 d Bm d B d Bm d B % d B GHz p F 8.0 120 18.0 13.0 13.5 10.5 55 1.7 12.0 0.42 0.7 2.5 150 +0.1 PIN CONNECTIONS 1. Emitter 2. Collector 3. Emitter 4. Base NE678M04 M04...
