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NE678M04 - MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

Description

The NE678M04 is fabricated using NEC's HFT3 wafer process.

With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz.

Features

  • HIGH GAIN.

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Datasheet Details

Part number NE678M04
Manufacturer NEC
File Size 89.36 KB
Description MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
Datasheet download datasheet NE678M04 Datasheet
Additional preview pages of the NE678M04 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com MEDIUM POWER NPN SILICON NE678M04 HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30 2.05±0.1 1.25±0.1 3 2.0±0.1 R55 1.25 0.650.65 0.650.65 DESCRIPTION The NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications.
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