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NE678M04 - MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

General Description

The NE678M04 is fabricated using NEC's HFT3 wafer process.

With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz.

Key Features

  • HIGH GAIN.

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Full PDF Text Transcription for NE678M04 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE678M04. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com MEDIUM POWER NPN SILICON NE678M04 HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8...

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H GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30 2.05±0.1 1.25±0.1 3 2.0±0.1 R55 1.25 0.650.65 0.650.65 DESCRIPTION The NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile o

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