NE688M03 Datasheet | NEC

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 Features - NEW M03 PACKAGE: - Smallest transistor outline package available - Low profile/0.59 mm package height - Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: f T = 9.5 GHz LOW NOISE FIGURE: NF = 1.7 d B at 2 GHz HIGH COLLECTOR CURRENT: ICMAX = 100 m A OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) 0.45 1 0.2±0.1 - - - TS 0.3±0.1 3 DESCRIPTION The NE688M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE688 is also available in chip and six different low cost plastic surface mount package styles. 0.59±0.05 +0.1 0.15 -0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS f T NF |S21E|2 h FE2 ICBO IEBO CRE3 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge. PARAMETERS AND CONDITIONS Gain Bandwidth at VCE = 1 V, IC = 3 m A, f = 2 GHz VCE = 3 V, IC = 20 m A, f = 2 GHz Noise Figure at VCE = 1 V, IC = 3 m A, f = 2 GHz VCE = 3 V, IC = 7 m A, f = 2 GHz Insertion Power Gain at VCE = 1 V, IC = 3 m A, f = 2 GHz VCE = 3 V, IC = 20 m A, f = 2 GHz Forward Current Gain at VCE = 1 V, IC = 3 m A Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz µA µA p F 0.7 UNITS GHz GHz d B d B d B d B 3 80 MIN 4 NE688M03 2SC5437 M03 TYP 5 9.5 1.9 1.7 4 8 145 0.1 0.1 0.8 2.5 MAX California Eastern Laboratories NE688M03 NONLINEAR MODEL SCHEMATIC CCBPKG CCB Q1 LBX Base LB...