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NE68939 - NPN SILICON EPITAXIAL TRANSISTOR

Description

The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications.

The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle.

Features

  • OUTPUT POWER AT 1dB.

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Datasheet preview – NE68939

Datasheet Details

Part number NE68939
Manufacturer NEC
File Size 27.47 KB
Description NPN SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet NE68939 Datasheet
Additional preview pages of the NE68939 datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 • 4 PIN MINI MOLD PACKAGE: NE68939 NE68939 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.9 ± 0.2 0.95 0.85 2 3 1.9 1 4 DESCRIPTION The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX driver stage in a 1.9 GHZ digital cordless telephone (DECT or PHS).
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