• Part: NE68939
  • Description: NPN SILICON EPITAXIAL TRANSISTOR
  • Category: Transistor
  • Manufacturer: NEC
  • Size: 27.47 KB
Download NE68939 Datasheet PDF
NEC
NE68939
FEATURES - OUTPUT POWER AT 1d B PRESSION POINT: 24.5 d Bm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 - 4 PIN MINI MOLD PACKAGE: NE68939 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.9 ± 0.2 0.95 0.85 3 1.9 DESCRIPTION The NE68939 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/4 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX driver stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package and is available on tape and reel. The NE68939 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. +0.10 0.6 -0.05 1) Collector 2) Emitter 3) Base 4) Emitter +0.2...