NE71300-M
FEATURES x Low noise figure NF = 0.6 d B TYP. at f = 4 GHz x High associated gain Ga = 14 d B TYP. at f = 4 GHz x Gate width: Wg = 280 Pm x Gate Length: Lg = 0.3 Pm
ORDERING INFORMATION
PART NUMBER NE71300-N NE71300-M NE71300-L NE71383B I DSS (m A) 20 to 50 50 to 80 80 to 120 20 to 120 83B PACKAGE CODE 00 (CHIP)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGSO VGDO ID Ptot Tch Tstg 5.0 ð5.0 ð6.0 IDSS 270 400 175 ð65 to +175 V V V m A m W m W °C °C [NE71383B] [NE71300]
REMENDED OPERATING CONDITION (TA = 25 °C)
CHARACTERISTIC Drain to Source Voltage Drain Current Input Power SYMBOL VDS ID Pin MIN. TYP. 3 10 MAX. 4 30 15 Unit V m A d Bm
Document No. P11691EJ2V0DS00 (2nd edition) Date Published February 1997 N Printed in Japan
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NE713
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC Gate to Source Leak Current Saturated Drain Current...
