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LOW NOISE L TO K-BAND GaAs MESFET
FEATURES
• LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE
3
NE71300
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA
24
2.5
21
2 GA 1.5
18
15
1 NF 0.5
12
DESCRIPTION
The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is suitable for both amplifier and oscillator applications in the consumer and industrial markets.
NE71300 Datasheet
