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NE71300 - LOW NOISE L TO K-BAND GaAs MESFET

General Description

The NE71300

Key Features

  • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz.
  • HIGH.

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Full PDF Text Transcription for NE71300 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE71300. For precise diagrams, and layout, please refer to the original PDF.

LOW NOISE L TO K-BAND GaAs MESFET FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µ...

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SSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz • LG = 0.3 µm, WG = 280 µm • EPITAXIAL TECHNOLOGY • LOW PHASE NOISE 3 NE71300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 24 2.5 21 2 GA 1.5 18 15 1 NF 0.5 12 DESCRIPTION The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is suitable for both amplifier and oscillator applications in the consumer and industrial markets.

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