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NE721S01 - GENERAL PURPOSE L TO X-BAND GaAs MESFET

Description

The NE721S01 is a low cost 0.8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications.

Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range.

Features

  • HIGH POWER GAIN: 7 dB TYP at 12 GHz.
  • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz.
  • LG = 0.8 µm, WG = 330 µm.
  • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz.
  • LOW COST.

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Datasheet Details

Part number NE721S01
Manufacturer NEC
File Size 203.02 KB
Description GENERAL PURPOSE L TO X-BAND GaAs MESFET
Datasheet download datasheet NE721S01 Datasheet
Additional preview pages of the NE721S01 datasheet.

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www.DataSheet4U.com GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES • HIGH POWER GAIN: 7 dB TYP at 12 GHz • HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz • LG = 0.8 µm, WG = 330 µm • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz • LOW COST PLASTIC PACKAGE 2 NE721S01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE S01 2.0 ± 0.2 2. 1 J 3 0.65 TYP. 1.9 ± 0.2 1.6 4 DESCRIPTION The NE721S01 is a low cost 0.8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications. Larger gate geometry make this device ideal for second and third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The NE721S01 is fabricated with an epitaxial process resulting in excellent phase noise in oscillator applications up to 14 GHz.
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