NE72218 Description
DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET.
NE72218 Key Features
- High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz
- Gate length
- Gate width
- 4-pin super minimold package
- Tape & reel packaging only available : Lg = 0.8 µm : Wg = 400 µm
- 8 mm wide embossed taping
- Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape
- Qty 3 kpcs/reel
- 8 mm wide embossed taping
- Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape