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NE72218 - C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET

Key Features

  • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz.
  • Gate length.
  • Gate width.
  • 4-pin super minimold package.
  • Tape & reel packaging only available : Lg = 0.8 µm : Wg = 400 µm.

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Full PDF Text Transcription for NE72218 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE72218. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Ga...

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S • High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz • Gate length • Gate width • 4-pin super minimold package • Tape & reel packaging only available : Lg = 0.8 µm : Wg = 400 µm ORDERING INFORMATION Part Number NE72218-T1 Package 4-pin super minimold Supplying Form • 8 mm wide embossed taping • Pin 3 (Source), Pin 4 (Drain) face the perforation side of the tape • Qty 3 kpcs/reel • 8 mm wide embossed taping • Pin 1 (Source), Pin 2 (Gate) face the perforation side of the tape • Qty 3 kpcs/reel NE72218-T2 Remark To order evaluation samples, consult your NEC sales representative (Part number for sample order: NE72

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