NE722S01
Description
NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band.
Key Features
- HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz
- OUTPUT POWER (at 1 dB pression): 15 dB TYP at f = 12 GHz
- LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz
- GATE LENGTH: LG = 0.8 µm (recessed gate)
- GATE WIDTH: WG = 400 µm
Applications
- C to X band low noise amplifiers
