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NE722S01 Datasheet

Manufacturer: NEC (now Renesas Electronics)

NE722S01 datasheet preview

Datasheet Details

Part number	NE722S01
Datasheet	NE722S01_NEC.pdf
File Size	128.75 KB
Manufacturer	NEC (now Renesas Electronics)
Description	NECs C TO X BAND N-CHANNEL GaAs MES FET

NE722S01 Overview

NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band.

NE722S01 Key Features

HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz
OUTPUT POWER (at 1 dB pression): 15 dB TYP at f = 12 GHz
LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz
GATE LENGTH: LG = 0.8 µm (recessed gate)
GATE WIDTH: WG = 400 µm

NE722S01 Applications

C to X band low noise amplifiers
C to X band oscillators

More Datasheets from NEC (now Renesas Electronics)

See all NEC (now Renesas Electronics) datasheets

Part Number	Description
NE72218	C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
NE720	General Purpose GaAs MESFET
NE721S01	GENERAL PURPOSE L TO X-BAND GaAs MESFET
NE713	L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71300	LOW NOISE L TO K-BAND GaAs MESFET
NE71300-L	L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71300-M	L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71300-N	L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE71383B	L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
NE734	NPN SILICON GENERAL PURPOSE TRANSISTOR

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