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NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01
FEATURES
• HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz • LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz • GATE LENGTH: LG = 0.8 µm (recessed gate) • GATE WIDTH: WG = 400 µm
2
OUTLINE DIMENSION
(Units in mm)
PACKAGE OUTLINE SO1
2.0 ± 0.2
1
2. 0 ± 0. 2
DESCRIPTION
NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance and uniformity.
NE722S01 Datasheet
