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NE76038 - L TO Ku-BAND GaAs MESFET

Description

NE76038 is a high performance gallium arsenide metal semiconductor field effect transistor housed in a plastic package.

Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1 - 14 GHz frequency range.

Features

  • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz.
  • HIGH.

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Datasheet preview – NE76038

Datasheet Details

Part number NE76038
Manufacturer NEC
File Size 40.37 KB
Description L TO Ku-BAND GaAs MESFET
Datasheet download datasheet NE76038 Datasheet
Additional preview pages of the NE76038 datasheet.

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Full PDF Text Transcription

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LOW NOISE L TO Ku-BAND GaAs MESFET NE76038 Noise Figure, NF (dB) Associated Gain, GA (dB) FEATURES • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz • LG = 0.3 µm, WG = 280 µm • LOW COST PLASTIC PACKAGING • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION NE76038 is a high performance gallium arsenide metal semiconductor field effect transistor housed in a plastic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1 - 14 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature a recessed 0.3 micron gate and triple epitaxial technology.
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