NE76038 is a high performance gallium arsenide metal semiconductor field effect transistor housed in a plastic package.
Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1 - 14 GHz frequency range.
Full PDF Text Transcription for NE76038 (Reference)
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NE76038. For precise diagrams, and layout, please refer to the original PDF.
LOW NOISE L TO Ku-BAND GaAs MESFET NE76038 Noise Figure, NF (dB) Associated Gain, GA (dB) FEATURES • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 7....
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LOW NOISE FIGURE: 1.8 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz • LG = 0.3 µm, WG = 280 µm • LOW COST PLASTIC PACKAGING • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION NE76038 is a high performance gallium arsenide metal semiconductor field effect transistor housed in a plastic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1 - 14 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature a recessed 0.3
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NE76038 Datasheet
