Click to expand full text
DATA SHEET
GaAs MES FET
NE76084
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
FEATURES
• Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: L g = 0.3 µ m • Gate width : W g = 280 µ m
L 1.78 ± 0.2 1 L
0.5 TYP.
PACKAGE DIMENSIONS (Unit: mm)
ORDERING INFORMATION
PART NUMBER NE76084-SL NE76084-T1 SUPPLYING FORM STICK Tape & reel 1000 pcs./reel Tape & reel 5000 pcs./reel
1.78 ± 0.2
LEAD LENGTH L = 1.7 mm MIN. L = 1.0 ± 0.2 mm L = 1.0 ± 0.2 mm
MARKING E
E
2 L 3 4 L
NE76084-T1A
0.5 TYP.
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C)
Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature V DS V GS V GD ID P tot T ch T stg 5.0 –3.0 –5.