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NE76084 - C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET

Key Features

  • Low noise figure & High associated gain NF = 1.6 dB TYP. , Ga = 9.0 dB TYP. at f = 12 GHz.
  • Gate length: L g = 0.3 µ m.
  • Gate width : W g = 280 µ m L 1.78 ± 0.2 1 L 0.5 TYP.

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Full PDF Text Transcription for NE76084 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE76084. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB T...

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ow noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: L g = 0.3 µ m • Gate width : W g = 280 µ m L 1.78 ± 0.2 1 L 0.5 TYP. PACKAGE DIMENSIONS (Unit: mm) ORDERING INFORMATION PART NUMBER NE76084-SL NE76084-T1 SUPPLYING FORM STICK Tape & reel 1000 pcs./reel Tape & reel 5000 pcs./reel 1.78 ± 0.2 LEAD LENGTH L = 1.7 mm MIN. L = 1.0 ± 0.2 mm L = 1.0 ± 0.2 mm MARKING E E 2 L 3 4 L NE76084-T1A 0.5 TYP. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperat

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