NE76084S Overview
The NE76084S provides a low noise figure and high associated gain through 14 GHz. The NE76084S device is fabricated by ion implantation for improved RF and DC performance, reliability, and uniformity.
NE76084S Key Features
- LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz
- HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz
- LG = 0.3 µm, WG = 280 µm
- LOW COST METAL/CERAMIC PACKAGE
- ION IMPLANTATION
- AVAILABLE IN TAPE & REEL