NE76100 Description
NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable for DBS, TVRO, GPS and another mercial systems.
NE76100 Key Features
- Low noise figure & High associated gain NF = 0.8 dB TYP., Ga = 12 dB TYP. at f = 4 GHz