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NE76118 - L to S BAND LOW NOISE AMPLIFIER

General Description

NE76118 is a n-channel GaAs MES FET housed in MOLD package.

Key Features

  • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz (1.25) 0.60 0.65 +0.1 0.3+0.1.
  • 0.05 0.3 0.4.
  • 0.05 2 2.1±0.2 1.25±0.1 3 0.3+0.1.
  • 0.05 0.15+0.1.
  • 0.05 0.3+0.1.
  • 0.05 (1.3).
  • High associated gain 2.0±0.2 Ga = 13.5 dB TYP. at f = 2 GHz.
  • Gate width : Wg = 400 Pm.
  • 4 pins super mini mold.
  • Tape & reel packaging only available V52 1 4 0 to 0.1.

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Full PDF Text Transcription for NE76118 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE76118. For precise diagrams, and layout, please refer to the original PDF.

DATA DATA SHEET SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. ...

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SCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz (1.25) 0.60 0.65 +0.1 0.3+0.1 –0.05 0.3 0.4–0.05 2 2.1±0.2 1.25±0.1 3 0.3+0.1 –0.05 0.15+0.1 –0.05 0.3+0.1 –0.05 (1.3) • High associated gain 2.0±0.2 Ga = 13.5 dB TYP. at f = 2 GHz • Gate width : Wg = 400 Pm • 4 pins super mini mold • Tape & reel packaging only available V52 1 4 0 to 0.1 ORDERING INFORMATION PART NUMBER NE76118-T1 0.9±0.1 QUANTITY 3 Kpcs/Reel. PACKING STYLE Embossed tape 8 mm wide. Pin 3 (Source), Pin 4 (Drain) face to perforation side of the tape

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