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NE76184A - GENERAL PURPOSE FET N-CHANNEL GaAs MES FET

General Description

NE76184A is a N-channel GaAs MES FET housed in ceramic package.

The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity.

Its excellent low noise and high associated gain make it suitable for DBS, TVRO, GPS and another commercial systems.

Key Features

  • Low noise figure & High associated gain NF = 0.8 dB TYP. , Ga = 12 dB TYP. at f = 4 GHz.

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DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabr...

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a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its excellent low noise and high associated gain make it suitable for DBS, TVRO, GPS and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 1.78 ±0.2 1 L L 1.78 ±0.2 0.5 TYP. 4 FEATURES • Low noise figure & High associated gain NF = 0.8 dB TYP., Ga = 12 dB TYP. at f = 4 GHz ORDERING INFORMATION PART NUMBER NE76184A-SL NE76184A-T1 NE76184A-T1A SUPPLYING FORM STICK Tape & reel LEAD LENGTH L = 1.7 mm MIN. L = 1.0 ± 0.