NE76184AS Description
NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxysealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity.
NE76184AS Key Features
- LOW NOISE FIGURE: 0.8 dB typical at 4 GHz
- HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz
- LG = 1.0 µm, WG = 400 µm
- LOW COST METAL/CERAMIC PACKAGE
- TAPE & REEL PACKAGING OPTION AVAILABLE