NE76184AS
Description
NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxysealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range.
Key Features
- LOW NOISE FIGURE: 0.8 dB typical at 4 GHz
- HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz
- LG = 1.0 µm, WG = 400 µm
- LOW COST METAL/CERAMIC PACKAGE
- TAPE & REEL PACKAGING OPTION AVAILABLE Optimum Noise Figure, NFOPT (dB) 4 3.5 GA 3 2.5 2 1.5 1 NF 0.5 0 1
