NE76184AS - GENERAL PURPOSE L TO X-BAND GaAs MESFET
NEC (now Renesas Electronics)
General Description
NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxysealed, metal/ceramic package.
Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz frequency range.
Full PDF Text Transcription for NE76184AS (Reference)
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www.DataSheet4U.com GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES • LOW NOISE FIGURE: 0.8 dB typical at 4 GHz • HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz • LG = 1.0...
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cal at 4 GHz • HIGH ASSOCIATED GAIN: 12 dB typical at 4 GHz • LG = 1.0 µm, WG = 400 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE Optimum Noise Figure, NFOPT (dB) 4 3.5 GA 3 2.5 2 1.5 1 NF 0.5 0 1 NE76184AS NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 24 21 18 15 12 9 6 3 0 10 20 DESCRIPTION NE76184AS is a high performance gallium arsenide metal semiconductor field effect transistor housed in an epoxysealed, metal/ceramic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1-12 GHz fr
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NE76184AS Datasheet
