| Part number | NE8500100 |
|---|---|
| Datasheet | NE8500100_NEC.pdf |
| File Size | 41.14 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
|
|
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for mercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package. The device incorporates Ti-Al gate and silicon dioxide glassivation.
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| NE85001 | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500199 | 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE85002 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500200 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-4 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-6 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE8500295-8 | 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE850R599A | C-BAND MEDIUM POWER GaAs MESFET |
| NE856 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
| NE85600 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR |
