NE850R599A Description
The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. Equivalent performance in a chip package can be obtained by using only 1 cell of the NE8500100 chip.
NE850R599A Key Features
- HIGH OUTPUT POWER: 0.5 W
- HIGH LINEAR GAIN: 9.5 dB
- HIGH EFFICIENCY (PAE): 38%
- SUPERIOR INTERMODULATION DISTORTION
- INDUSTRY STANDARD PACKAGING