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NE850R599A Datasheet

Manufacturer: NEC (now Renesas Electronics)
NE850R599A datasheet preview

Datasheet Details

Part number NE850R599A
Datasheet NE850R599A_NEC.pdf
File Size 19.07 KB
Manufacturer NEC (now Renesas Electronics)
Description C-BAND MEDIUM POWER GaAs MESFET
NE850R599A page 2

NE850R599A Overview

The NE850R599A is a medium power GaAs MESFET designed for up to a 1/2W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. Equivalent performance in a chip package can be obtained by using only 1 cell of the NE8500100 chip.

NE850R599A Key Features

  • HIGH OUTPUT POWER: 0.5 W
  • HIGH LINEAR GAIN: 9.5 dB
  • HIGH EFFICIENCY (PAE): 38%
  • SUPERIOR INTERMODULATION DISTORTION
  • INDUSTRY STANDARD PACKAGING
NEC (now Renesas Electronics) logo - Manufacturer

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Part Number Description
NE85001 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500100 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500199 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE85002 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500200 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500295-4 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500295-6 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE8500295-8 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
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NE85600 NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NE850R599A Distributor

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