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NE856M03 - NPN SILICON TRANSISTOR

General Description

The NE856M03 transistor is designed for low cost amplifier and oscillator applications.

Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity.

Key Features

  • NEW M03.

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Full PDF Text Transcription for NE856M03 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE856M03. For precise diagrams, and layout, please refer to the original PDF.

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M03 FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • ...

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stor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz HIGH COLLECTOR CURRENT: ICMAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 • • TC 3 1.4 ±0.1 0.45 (0.9) 0.45 1 0.2±0.1 0.3±0.1 DESCRIPTION The NE856M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications.

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