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NE856M13 - NPN SILICON TRANSISTOR

Datasheet Summary

Description

The NE856M13 transistor is designed for low cost amplifier and oscillator applications.

Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity.

Features

  • NEW.

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Datasheet preview – NE856M13

Datasheet Details

Part number NE856M13
Manufacturer NEC
File Size 19.26 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet NE856M13 Datasheet
Additional preview pages of the NE856M13 datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M13 FEATURES • NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 +0.1 0.5 –0.05 +0.1 0.15 –0.05 1 0.35 0.3 2 • • XX 1 +0.1 1.0 –0.05 3 0.7 0.35 2 +0.1 0.15 –0.05 0.2 3 +0.1 0.2 –0.05 DESCRIPTION The NE856M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity.
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