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NE856M13 - NPN SILICON TRANSISTOR

General Description

The NE856M13 transistor is designed for low cost amplifier and oscillator applications.

Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity.

Key Features

  • NEW.

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Full PDF Text Transcription for NE856M13 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NE856M13. For precise diagrams, and layout, please refer to the original PDF.

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE856M13 FEATURES • NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm packa...

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transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz HIGH COLLECTOR CURRENT: IC MAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M13 +0.1 0.5 –0.05 +0.1 0.15 –0.05 1 0.35 0.3 2 • • XX 1 +0.1 1.0 –0.05 3 0.7 0.35 2 +0.1 0.15 –0.05 0.2 3 +0.1 0.2 –0.05 DESCRIPTION The NE856M13 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity.

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