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NE960R200 - 0.2 W X / Ku-BAND POWER GaAs MES FET

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NEC

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NE960R200 0.2 W X / Ku-BAND POWER GaAs MES FET by NEC - Datasheet Preview — Datasheet preview – NE960R200

Datasheet Details

Part number	NE960R200
Manufacturer	NEC
File Size	62.85 KB
Description	0.2 W X / Ku-BAND POWER GaAs MES FET
Datasheet	NE960R200 Datasheet
Additional preview pages of the NE960R200 datasheet.

Product details

Description

The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems.

Features

High Output Power.
High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP.
High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 14.5 GHz.

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Other Datasheets by NEC

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Published: May 7, 2005 |