NEM0899F01-30 Datasheet | NEC

High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30 Features - HIGH OUTPUT POWER: 100 Watts - HIGH GAIN: Linear Gain = 12 dB - LOW INTERMODULATION DISTORTION - HIGH DYNAMIC RANGE - HIGH EFFICIENCY: ηD = 53% - INTERNALLY MATCHED FOR THE 470-860 MHz BAND - PUSH-PULL STRUCTURE DESCRIPTION The NEM0899F01-30 is a high power enhancement mode Silicon MOSFET. Its design employs a vertical geometry for high drain to source breakdown voltage, a 1.3 mm x 28.8 mm gate, a gold metallization system, and a plasma silicon nitride layer on the surface of the transistor for long life and reliable operation. The NEM0899F01-30 uses two chips in a pushpull configuration and internal...