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NES1823P-50 Datasheet PDF

NEC NES1823P-50

The NES1823P-50 is a 50 W push-pull type GaAs MES FET designed for high power transmitter applications for PCS, DCS, PHS, and IMT2000 base station systems. It is capable of delivering 50 W of output power (CW) with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz, however with different matching, 60 MHz or less of instantaneous bandwidth can be achieved anywhere from 0.8 to 2.3 GHz.
Part No. NES1823P-50
Datasheet NES1823P-50 Download
Manufacturer
NEC
Description 50 W L-BAND PUSH-PULL POWER GaAs MES FET
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NES1823P-50 datasheet page 1 preview

DESCRIPTION

The device employs 0.9 µm Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal characteristics, and reliability. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

● Push-pull type N-channel GaAs MES FET
● High output power: Pout = 50 W TYP.
● High linear gain: GL = 10.5 dB TYP.
● High power added efficiency: ηadd = 40 % TYP. @ VDS = 10.0 V, IDset = 4.0 A (total), f = 2.20 GHz ORDERING INFORMATION (PLAN) Part Number NES1823P-50 Package T-86 Supplying Form ESD protective envelope Remark To order evaluation samples, consult your NEC sales representative. Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country.
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