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NESG2030M04 - NONLINEAR MODEL

General Description

The NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process.

With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz.

Maximum DC current input of 35 mA provides a device with a usable current range of 250 µA to 25 mA.

Key Features

  • SiGe.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • • • • SiGe TECHNOLOGY: fT = 60 GHz Process LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance M04 DESCRIPTION The NESG2030M04 is fabricated using NEC's state-of-the-art SiGe, wafer process. With a typical transition frequency of 60 GHz the NESG2030M04 is usable in applications from 100 MHz to over 10 GHz. Maximum DC current input of 35 mA provides a device with a usable current range of 250 µA to 25 mA. The NESG2030M04 provides excellent low voltage/low current performance.