NEC NESG210719
NECs NPN SiGe TRANSISTOR
FEATURES
● IDEAL FOR OSC., HIGH-GAIN AMPLIFICATIONAPPLICATIONS
● HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR● 3-PIN SUPER MINIMOLD (19) PACKAGE ORDERING INFORMATION PART NUMBER NESG210719 NESG210719-T1 QUANTITY 50 pcs (Non reel) 3 kpcs/reel SUPPLYING FORM
● 8 mm wide embossed taping
● Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(TA =+25ºC) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note Tj Tstg RATINGS 13.0 5.0 1.5 100 200 150 −65 to +150 UNIT V V V mA mW °C °C Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories NESG210719 ELECTRICAL CHARACT...